IPP023N04N G
Manufacturer:
Infineon
Mfr.Part #:
IPP023N04N G
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 167 W 40 V Continuous Drain Current (ID):90 A 120 nC
| Parameter | Value |
|---|---|
| Gate Charge | 120 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 90 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 2.3 mΩ |
| Input capacitance | 10 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 167 W |
| Drain to Source Breakdown Voltage (Vds) | 40 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 9
Distributors
pcbx
pcbxUnit Price$1.42589
Ext.Price$1.42589
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $1.42589 | $1.42589 |
| 10 | $1.39171 | $13.91710 |
| 25 | $1.37975 | $34.49375 |
| 50 | $1.36790 | $68.39500 |
| 100 | $1.35819 | $135.81900 |